IRFD123PBF - MOSFET N-CH 100V 1.3A 4-DIP

Manufacturer Part Number

IRFD123PBF

Internal Part Number

ABC-IRFD123PBF

Manufacturer

Vishay Siliconix

Brief Description

MOSFET N-CH 100V 1.3A 4-DIP

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1062733 Pieces

Reference Price

~~USD 0.308~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have IRFD123PBF in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IRFD123PBF. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for IRFD123PBF

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IRFD123PBF

Manufacturer : Vishay Siliconix

Description : MOSFET N-CH 100V 1.3A 4-DIP

Series : -

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 270 mOhm @ 780mA, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 25V

FET Feature : -

Power Dissipation (Max) : 1.3W (Ta)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : 4-DIP, Hexdip, HVMDIP

Package / Case : 4-DIP (0.300", 7.62mm)

Weight : -

Condition : New and original

Documents for IRFD123PBF

Datasheets : IRFD123PBF.pdf

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