TH58BYG2S3HBAI6 - IC FLASH 4G PARALLEL 67VFBGA

Manufacturer Part Number

TH58BYG2S3HBAI6

Internal Part Number

ABC-TH58BYG2S3HBAI6

Manufacturer

Toshiba Memory America, Inc.

Brief Description

IC FLASH 4G PARALLEL 67VFBGA

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

135032 Pieces

Reference Price

~~USD 3.08~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TH58BYG2S3HBAI6 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TH58BYG2S3HBAI6. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TH58BYG2S3HBAI6

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TH58BYG2S3HBAI6

Manufacturer : Toshiba Memory America, Inc.

Description : IC FLASH 4G PARALLEL 67VFBGA

Series : Benand™

Part Status : Active

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH - NAND (SLC)

Memory Size : 4Gb (512M x 8)

Clock Frequency : -

Write Cycle Time - Word, Page : 25ns

Access Time : 25ns

Memory Interface : Parallel

Voltage - Supply : 1.7V ~ 1.95V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 67-VFBGA

Supplier Device Package : 67-VFBGA (6.5x8)

Weight : -

Condition : New and original

Documents for TH58BYG2S3HBAI6

Datasheets : TH58BYG2S3HBAI6.pdf

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