TSM089N08LCR RLG - MOSFET N-CH 80V 67A 8PDFN

Manufacturer Part Number

TSM089N08LCR RLG

Internal Part Number

ABC-TSM089N08LCR RLG

Manufacturer

Taiwan Semiconductor Corporation

Brief Description

MOSFET N-CH 80V 67A 8PDFN

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1169595 Pieces

Reference Price

~~USD 0.27986~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TSM089N08LCR RLG in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TSM089N08LCR RLG. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TSM089N08LCR RLG

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TSM089N08LCR RLG

Manufacturer : Taiwan Semiconductor Corporation

Description : MOSFET N-CH 80V 67A 8PDFN

Series : -

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 80V

Current - Continuous Drain (Id) @ 25°C : 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 12A, 10V

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 6119pF @ 40V

FET Feature : -

Power Dissipation (Max) : 83W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 8-PDFN (5x6)

Package / Case : 8-PowerTDFN

Weight : -

Condition : New and original

Documents for TSM089N08LCR RLG

Datasheets : TSM089N08LCR RLG.pdf

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